Contamination effects on EUV optics

Cover of: Contamination effects on EUV optics |

Published by National Aeronautics and Space Administration, Marshall Space Flight Center, National Technical Information Service, distributor in [Marshall Space Flight Center], Ala, [Springfield, Va .

Written in English

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Subjects:

  • Contamination.,
  • Extreme ultraviolet radiation.,
  • Optical properties.,
  • Physical optics.,
  • Aerospace environments.,
  • Design analysis.

Edition Notes

Book details

StatementJ. Tveekrem.
SeriesNASA/TP -- 1999-209264., NASA technical paper -- 209264.
ContributionsGeorge C. Marshall Space Flight Center.
The Physical Object
FormatMicroform
Pagination1 v.
ID Numbers
Open LibraryOL15560409M

Download Contamination effects on EUV optics

Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists.

Extreme ultraviolet lithography (EUVL) is the principal lithography technology aiming to manufacture computer chips beyond the current nm-based optical lithography, and recent progress has been made on several fronts: EUV light sources, optics, optics metrology, contamination control, masks and mask handling, and resists.

Residual water and other contaminants in the presence of EUV photons oxidize and degrade the optics surface. Both oxidation and carbon deposition on the optical surfaces reduce the reflectivity of the optics and can introduce wavefront aberrations. Pushing Optics to the Extreme. EUV Radiation Sources.

The first practical EUV radiation sources were huge devices available only to large research labs and lithography companies, but recent advancements in EUV technology has made way for much smaller and more accessible tabletop EUV systems.

Extreme ultraviolet lithography (EUVL) is the principal lithography technology—beyond the current nm-based optical lithography—aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists.

Ionizing radiation creates chemical reactions that contaminate optical surfaces in an atmosphere with trace amounts of water vapor or organic molecules.

Organic molecules adsorbed on the optical surface can be cracked by both the energetic radiation and the secondary electrons it produces, creating a contaminating carbon film. For additional fundamental and historical information on EUV optics, readers are referred to subchapters 4A through 4D in the first edition of the book.

Chapter 6 is on optics contamination, which was deemed a leading challenge for EUVL early on, but later became a technical issue that is now Contamination effects on EUV optics book to be addressed.

EUV lithography is the most promising new technology for the next node of semiconductor devices. Unfortunately, the high energy photons are likely to generate more contamination than observed with ArF or KrF light which can reduce the transmission of the EUV optics.

Optics Contamination Assessment of resist outgassing related EUV optics contamination for CAR and non-CAR material chemistries I. Pollentier, I. Neira, and R. Gronheid Proc. SPIE() Complex species and pressure dependence of intensity scaling laws for contamination rates of EUV optics determined by XPS and ellipsometry.

The carbon contamination on extreme ultraviolet (EUV) masks is a critical issue causing throughput degradation and unexpected effects on imaging performance. In this work, a series of carbon contamination experiments were performed on a patterned EUV mask.

Extreme ultraviolet lithography (EUVL) is the principal lithography technology-beyond the current nm-based optical lithography-aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and s: 3.

Extreme ultraviolet lithography (EUVL) is the principal lithography technology-beyond the current nm-based optical lithography-aiming to manufacture computer chips, and recent progress has been made on several fronts: EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists.

Carbon contamination on EUV optical elements affects both the absorption and phase of the reflected light. Because the carbon deposition alters the phase structure of the reflected EUV light it effectively alters the figure of these optics and, thus, the aberrations as well.

Contamination of EUV optics by the interaction of radiation w ith residual hydrocarbons is still one of the major concerns with EUV exposure tools It is well known that the carbonaceous.

Unraveling the effect of resist composition on EUV optics contamination - NASA/ADS EUV lithography is the most promising new technology for the next node of semiconductor devices.

Unfortunately, the high energy photons are likely to generate more contamination than observed with ArF or KrF light which can reduce the transmission of the EUV optics. Similar to the mechanism of oxidation, carbon contamination occurs if EUV-induced photoelectrons are present.

They induce dissociation of the hydrocarbon molecules adsorbed in the illuminated area and therefore lead to carbon containing layers on top of the silicon.

Particulate and molecular contamination control in EUV-induced H2-plasma in EUV lithographic scanner Paper Author(s): Mark A. van de Kerkhof, Andrei Yakunin, Selwyn Cats, Christian Cloin, ASML Netherlands B.V. (Netherlands). Optical Systems Contamination: Effects, Measurement, Control Editor(s): A.

Peter M. Glassford *This item is only available on the SPIE Digital Library. Get this from a library. Contamination effects on EUV optics.

[J Tveekrem; George C. Marshall Space Flight Center.]. The optical path of an EUV exposure tool should be entirely inside a high vacuum environment to prohibit absorbed contamination from the EUV optics.

In spite of the demand of a vacuum environment goes through EUV pod, the DUV and nm optics are subjected to contaminant occurrence, and also when nitrogen purged the optical path [22]. Carbon contamination of extreme ultraviolet (EUV) masks and its effect on imaging is a significant issue due to lowered throughput and potential effects on imaging performance.

In this work, a series of carbon contamination experiments were performed. Thanks to the dry-clean technique, TSMC said it has enhanced resource utilization efficiency dramatically. Since its introduction inthe duty cycle of EUV mask has increased more than 80%, and the lifetime for advanced process EUV mask has also extended, generating an accumulated NT$2 billion (US$68 million) of improvement effect, it said.

Download Citation | Characterization of EUV induced contamination on multilayer optics | Extreme ultraviolet lithography (EUVL) is a next generation photolithographic technique that uses nm. Plasma-based Sn sources have been used to generate EUV light, but debris contamination and damage limits the life expectancy of plasma-facing collector optics.

Although mitigation systems reduce the amount of vapor, thermal and energetic particles still reach mirror surfaces. Contamination Effects on EUV Optics. By J. Tveekrem. Abstract. During ground-based assembly and upon exposure to the space environment, optical surfaces accumulate both particles and molecular condensibles, inevitably resulting in degradation of optical instrument performance.

Currently, this performance degradation (and the resulting end-of. • S. Bajt, “Optics contamination”, a book chapter in the Extreme Ultraviolet Lithography, editor V. Bakshi, to be published by SPIE Press in • R.

Soufli, S. Bajt, R. Hudyma, J. Taylor, “Optics and multilayer coatings for EUVL systems”, a book chapter in the Extreme Ultraviolet. The effect of surface contamination and subsequent mask surface cleaning on the lithographic performance of a EUV mask is investigated.

SEMATECH's Berkeley micro-field exposure tool (MET) printed 40 nm and 50 nm line and space (L/S) patterns are evaluated to compare the performance of a contaminated and cleaned mask to an uncontaminated mask.

After three decades of development, a new generation of lithography machines has now been shipped to large computer chip makers. It uses extreme ultraviolet (EUV) light at a wavelength of nm to make silicon features down to a few nanometers in size on the memory chips and processors of tomorrow.

With more thancomponents, such an EUV lithography system is one of the most complex. Carbon contamination is an undesired effect occurring. Book. Dec ; APPL OPTICS; A comprehensive model of radiation-induced carbon contamination of extreme ultraviolet (EUV) optics.

The hydrogen serves to mitigate the effect of tin in these machines and avoid and/or counteract contamination by tin of the EUV optics. In combination with the intense EUV light, this puts the MLMs in contact not only with H 2 gas, but also with H + ions and H radicals, which are known to lead to degradation (e.g.

blistering [35]) of Mo/Si MLMs. The new facility, called EBL2, will support the common goal of understanding of contamination effects on surfaces under all extreme ultraviolet radiation conditions foreseen in the power roadmap.

The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV optics, sensors, masks and pellicles. One of the least understood degradation mechanisms is the effect of EUV-induced plasmas generated by photo-ionization of background gas.

Appropriate testing can help to inventory. Extreme ultraviolet lithography (also known as EUV or EUVL) is a lithography technology using a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about nm.

While EUV technology is available for mass production, 53 machines worldwide capable of producing wafers using the technique were delivered since Q1while immersion lithography systems. Extreme ultraviolet lithography (EUVL) is a leading candidate for the 22 nm node lithography and beyond.

37 EUVL aerial image formation through modeling is necessary for modeling of optical transfer function to assimilate optical diffraction, long range layout dependent flare effects, and shadowing effects due to non-telecentric imaging optics.

Reticle contamination 95% confidence interval. EUV Lithography Workshop 13 Reliability “EUV mask 3D Effects and Possible Mitigation Strategies” EUV Lithography Workshop 27 Process control for EUV Optics, mask and wafers are in vacuum 13 nm 1 NA k O CD control = ±×13 nm = ± nm.

Editor of Bestselling Book, EUV Lithography (2nd Edition, SPIE Press, ) Austin, EUV light sources, scanners, optics, contamination control, masks and mask handling, and resists.

This book Title: Promoting EUVL and its Blue-X. Extreme-ultraviolet (EUV) lithography based on reflective optics is expected to require at least one filter window to 1) reduce out-of-band radiation in the ultraviolet, visible and infrared, 2. The impact of carbon contamination on extreme ultraviolet (EUV) masks is significant due to throughput loss and potential effects on imaging performance.

Current carbon contamination research primarily focuses on the lifetime of the multilayer surfaces, determined by reflectivity loss and reduced throughput in EUV exposure tools. Extreme ultraviolet (EUV) lithography has been under development for more than 20 years. Among all the unsolved technological challenges the generation of appropriate light has been biggest.

For a long time, there was severe doubt if the target of Watts for. This book has resulted from his many years of experience in EUVL development and from teaching this subject to future specialists.

The book proceeds from an historical perspective of EUV lithography, through source technology, optics, projection system design, mask, resist, and patterning performance, to cost of ownership. The PML team uses two techniques to analyze the EUV-induced contamination – x-ray photoelectron spectroscopy (XPS), which reveals the atomic composition and some information on chemical state, and spectroscopic ellipsometry, which is very sensitive to variations in optical properties – integrated with data from surface scientists at Rutgers.Carbon Contamination of Extreme Ultraviolet (EUV) Masks and its Effect on Imaging Yu-Jen Fan, Leonid Yankulin, Greg Denbeaux, Yunfei Wang, Robert Geer College of Nanoscale Science & Engineering, University at Albany.

Andrea Wüest, Frank Goodwin, Sungmin Huh. SEMATECH Albany.The contamination of optical surfaces in EUV (extreme ultraviolet) exposure tools in the presence of background vacuum gases (hydrocarbons, oxygen-containing gases) shortens optics lifetimes, and.

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